Fabrication and Characterization of Micrometer Scale Graphene Structures for Large-Scale Ultra-Thin Electronics

Graphene offers many useful properties that can revolutionize modern electronic devices. Specifically, it provides high charge carrier mobility in a mechanically robust, atomically thin form factor. Many of these are observed graphene which is prepared from exfoliated graphite and processed with electron beam lithography. These processes both time intensive cost- prohibitive for the large-scale production necessary use consumer electronics. This work details processing characterization commercially available chemical vapor deposition (CVD) on SiO2/Si hBN-layered wafers using conventional photolithography 4″ wafer standard. The findings indicate CVD films resilient after even lengths up to 1 mm. Electrical via resistance measurements Hall Effect at room temperature clearly indicates influence substrate material graphene’s electrical properties. At length scales, SiO2 resembles lightly doped semiconductor terms its density (7.8 × 1015 cm−2), yet (2.6 cm2/Vs) metal. hBN/SiO2 has 8.2 1012 cm−2 2.68 103 cm2/Vs—comparable existing high-mobility semiconducting materials. does provide cost-effective means producing large form-factor devices low moderate applications eventually monolithic